features low wavelength variation 461-465 nm at 20 ma high performance C 1.3 mw superior sic substrate technology excellent chip-to-chip consistency high reliability single wire bond structure class 2 esd rating ? C ? ? ? ? ? ? applications automotive applications dashboard lighting interior lighting toggle switch lighting electronic signs and displays indicator lights ? C C C ? ? superblue? generation ii leds preliminary data sheet c430cb290-s200 crees superblue leds combine highly effcient gan with crees proprietary g?sic? substrate to deliver the ultimate price/performance for high-intensity blue leds. the C430CB290-S2100 is designed for automotive applications or any application where wavelength stability and chip robustness are critical. c430cb290-s200 chip diagram top view bottom view 260 x 260 m sic substrate t = 250 m backside metallization gold bond pad 114 m diameter die cross section cathode (-) anode (+) mesa (junction) 240 x 240 m d a t a s h e e t : c p r 3 d n r e v . - subject to change without notice. www.cree.com
copyright ? 2008 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and g?sic are registered trademarks, and superblue is a trademark of cree, inc. 2 cpr3dn rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 25c notes &3 c430cb290-s200 dc forward current 30 ma peak forward current (1/10 duty cycle @ 1khz) 70 ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 20 ma note 3 part number forward voltage (v f , v) radiant flux (p, mw) reverse current [i(vr=5v), a] peak wavelength ( d , nm) dominant wavelength ( d , nm) full width half max ( d , nm) typ. max. min. typ. max. typ. min. typ. max. typ. C430CB290-S2100 4.0 4.5 0.85 1.3 10 423 461 463 465 59 mechanical specifcations c430cb290-s200 description dimension tolerance p-n junction area (m 2 ) 240 x 240 35 top area (m 2 ) 260 x 260 35 bottom area (m 2 ) 260 x 260 35 chip thickness (m) 250 25 au bond pad diameter (m) 114 20 au bond pad thickness (m) 1.1 0.5 back contact metal diameter (m) 114 20 notes: maximum ratings are package dependent. the above ratings were determined using a t-1 3/4 package (with hysol os4000 epoxy) for characterization. ratings for other packages may differ. the forward currents (dc and peak) are not limited by the die but by the effect of the led junction temperature on the package. the junction temperature limit of 125c is a limit of the t-1 3/4 package; junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (<5 seconds). product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. the esd classifcation of class 2 is based on sample testing according to mil-std-883e. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 20 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy). optical characteristics measured in an integrating sphere using illuminance a. 1. 2. 3.
copyright ? 2008 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and g?sic are registered trademarks, and superblue is a trademark of cree, inc. 3 cpr3dn rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the cb290 led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. characteristic curves these are representative measurements for the cb290 led product. actual curves will vary slightly for the various radiant flux and dominant wavelength bins. dominant wavelength shift vs forward current forward current vs forward voltage 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 vf (v) if (ma) -0.5 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 if (ma) shift (nm) relative intensity vs forward voltage 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 if (ma) % relative intensity
copyright ? 2008 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and g?sic are registered trademarks, and superblue is a trademark of cree, inc. 4 cpr3dn rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com radiation pattern this is a representative radiation pattern for the cb290 led product. actual patterns will vary slightly for each chip.
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